By Targeted News Service ALEXANDRIA, Va., Jan. 5 — International Business Machines, Armonk, N.Y., has been assigned a patent developed by four co-inventors for a “method for forming retrograded well for MOSFET.” The co-inventors are Huilong Zhu, Poughkeepsie, N.Y., Zhijiong Luo, Beijing, Qingqing Liang, Lagrangeville, N.Y., and Haizhou Yin, … […]
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