TI has introduced a 60-V N-channel power FemtoFET power transistor in a 1.53×0.77mm silicon-based package with a typical on-resistance (Rdson) of 54m designed to replace […]
Read the original post by David Manners
Consumer Electronics in the News
TI has introduced a 60-V N-channel power FemtoFET power transistor in a 1.53×0.77mm silicon-based package with a typical on-resistance (Rdson) of 54m designed to replace […]
Read the original post by David Manners